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Information × Registration Number 0304U001667, 0101U006518 , R & D reports Title Radical beam gettouny epitaxy a novel technique in the technology of semiconucte device structures based on multicomponent А3В5 compounds popup.stage_title Технологічні аспекти радикало-променевої епітаксії гетеро структур на основі сполук А3В5 Head Kidalov V.V., Registration Date 12-03-2004 Organization Ukrainian Research and Design Institute for Chemical Engineering Joint - stock company popup.description2 With the help of using porous GaAs as intermediate between GaAs and GaN new type if geterostructures was obtained , with significant value of lattice mismatch. X ray diffraction measurement shows, that cubic GaN on porous GaAs substrate has no tensilestrain. Product Description popup.authors popup.nrat_date 2020-04-02 Close