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Information × Registration Number 0304U002196, 0101U002880 , R & D reports Title Fundamentals of formation processes of surface nanosize structures and investigation methods for advanced materials which are essential for power generation complex popup.stage_title Дослідження міграції та сегрегації в системах кремній з сурфактантом - германій, а також формування електронної структури та адсорбційних властивостей інтерфейса Si – адсорбат Head Nakhodkin Mykola, Registration Date 23-02-2004 Organization Taras Shevchenko Kiev university popup.description2 It was shown, that formation of Cu/Ge(111) interface is different for crystalline and amorphous surfaces. This formation also is different than for the Cu/Si(111) case. Quantum chemical modeling of B-dimers Ge-Ge and Si-Si diffusion along dimer row on Ge(100) surface showed existence of two ways for diffusion process. Energy barriers for each way was calculated and there equivalence established. It was found by STM and AES methods, that in the creation and existence of different types of structures on Si(100) surfaces the role of adsorbed carbon in quantities up to 0.01ML is very important. The sufficient influence of scattering angle on the intensity of volume plasmon line in REELS was shown. This fact is essential in the analysis of electron spectra and modeling of processes of middle energy electron- solid state interaction. The new method of REELS data processing can be used not only for metals, but also even for compound semiconductors. Product Description popup.authors popup.nrat_date 2020-04-02 Close