Search academic texts

Information × Registration Number 0304U002200, 0101U006494 , R & D reports Title Investigation of the generation-recombination processes and electron transport in semiconductors and semiconductor structures which are the element base foundation of novelty devices for complex automation and information popup.stage_title Дослідження впливу зовнішніх факторів на сенсорні структури, спін-залежної рекомбінаціїї через парамагнітні центри, структур із системою тунельно-резонансних бар’єрів, розшарування струму в структурах КНІ Head Tretyak Oleg, Registration Date 23-02-2004 Organization Taras Shevchenko Kiev university popup.description2 The influence of external factors on the parameters of heterostructures with nanocrystalline semiconductors and dielectrics, the influence of superconductivity on the electonic transport processes in metal-semiconductor contacts were investigated. Technology of metal-organic semiconductors manufacuring has been designed, the properties of contact structures based on metal-organic semiconductors were researched. Near-field effects in the structers with hidden quantum dots, capacitance characteristics of layered structures with Ge quantum dots in Si, current transport mechanisms in heterostructures on GaAs base with double tunnel transparent barrier were investigated. Nonusual magnetic behavior of anisotropic ferromagnetic Ni2MnGa have been explained theoretically. Pecularities of Hall effect in oxide films InxOy as well as extra high density currents flow in silicon sructures with dielectrical insulation have been determined Product Description popup.authors popup.nrat_date 2020-04-02 Close