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Information × Registration Number 0304U002931, 0104U009957 , R & D reports Title "Development of technological methods of receipt on the basis of InGaN with the use of setting gazo by a phase epitaksii from threw organic compounds "Epiquip" popup.stage_title "Розробка технологічних методів отримання наноструктур на основі InGaN з використанням установки газофазової епітаксії із металоорганічних сполук "Epiquip" Head Lushik Sergey, Registration Date 14-01-2005 Organization The liability limited company "Ukrainian technological agentsiya" popup.description2 During performance work the following scientific - technological problems are solved: -techniques of researches of light-emitting devices, formations of light-emitting structures on basis InGaN are developed; -the experimental samples received by methods gasphase epitaxy from metalloorganic connections are investigated; -Features of technology nanostructure GaAlN/InGaN/GaN for light-emitting diodes be relative hydride a method epitaxy are considered. -On the basis of the thermodynamic analysis of system and results of experimental researches, significant technological dependence of process and optimum conditions of carrying out of all stages of a work cycle of reception nanostructure GaN/AlGaN/InGaN/GaN on linings of sapphire is established. The analysis of requirements to initial substances for hydrideepitaxy high-quality nanostructure for light-emitting diodes and security is lead(carried out) by the industrial equipment of manufacture of such structures. Product Description popup.authors popup.nrat_date 2020-04-02 Close