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Information × Registration Number 0304U002934, 0104U008999 , R & D reports Title Theoretical researches conducting for the receiving of optimum characteristics (level of alloying, thickness and active layer composition of light-radiating devices on geterostructure InGaN with quantum points received by gas-phase epitaxy methods from metal organic connection (MGFE). popup.stage_title Проведення теоретичних досліджень одержання оптимальних характеристик (рівня легування, товщини та складу активного шару) світловипромінюючих приладів на гетероструктурах InGaN з квантовими точками, отриманих методами газо фазової епітаксії із металоорганічних сполук (МО ГФЕ). Head Obolonskiy Valery, Registration Date 14-01-2005 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description2 In work the analysis of modern development, researches and manufactures of materials and devices of modern systems of display of the information is lead on the basis of semiconductors AIIIBV. It is shown, that it, practically, one of the most perspective directions of electronic technics which develops. In the given work main principles of formation radiating р-п structures are considered on the basis of connections AIIIBV. The analysis of influence of parameters structures on functional characteristics radiating homo- р-п transitions to basis GaN is executed and opportunities of their change and improvement are shown. It is shown, that one of ways of improvement of functional characteristics of radiators is formation hetero- р-п transitions. The power diagram hetero- transitions for systems GaN/InGaN and GaN/AlGaN is considered and the basic requirements to hetero- structure are formulated. Product Description popup.authors popup.nrat_date 2020-04-02 Close