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Information × Registration Number 0304U002935, 0104U009955 , R & D reports Title Development of methods of analysis of quality of nanostruktur (closeness of distributions, roughness of surface of plates at the level of 0,4 - 0,8 nm)which are used in the technological loop of creation of radiative light devices, with the use of atomic power microscopy popup.stage_title Розробка методик аналізу якості наноструктур (щільність дислокацій, шероховатість поверхні пластин на рівні 0,4 - 0,8 нм), що використовуються в технологічному циклі створення світловипромінюючих приладів, з використанням атомної силової мікроскопії Head Bogdan Viktor, Registration Date 14-01-2005 Organization Center of transfer of technologies popup.description2 In work the review of modern methods of research of morphological features of surfaces nanostructure InGaN/GaN, layers GaN which has been brought up on oxidized linings of silicon, and also on sapphire is made. The considered methodical aspects of an estimation of quality nanostructure objects, including trinitride by means of atomic-power microscopy. Concrete examples of an estimation of morpatomichology of a surface of layers GaN which has been brought up on linings Al2O3 are resulted. The analysis of experimental researches of quality nanostructure trinitride has shown, that the most comprehensible and express tool for studying morphological features of a surface of the brought up film and its quality is the microscope of nuclear forces. Product Description popup.authors popup.nrat_date 2020-04-02 Close