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Information × Registration Number 0304U004156, 0103U004206 , R & D reports Title Studying of radiation damages of the semiconductor, composite and biologocal materials irradiated by ions of medium energies popup.stage_title Дослідження радіаційних дефектів у напівпровідниках Head Bobkov V., Registration Date 25-03-2004 Organization Kharkov National University named after V.N.Karazin popup.description2 The objects of studies were materials of various electronic structures: semiconductors of AIIIBV (GaAs, Ga, Ca, InAs) and AIIBVI (Zn, ZnSe, ZnTe) groups, metals (Zn, Cu) and organic meterials. The work have for an object getting new data about the basic characteristics of secondary ion and ion-photon emissions of materials with various electronic structures and clearing out the influence on these processes electronic structures as a solid as sputtered particles. Methods of research were the energy-mass-spectrometry of secondary ions and the optical spectral analysis of the secondary excited particles emission. Energy distributions of secondary ions emitted from a surface of AIIIBV group semiconductors at their bombardment by a beam of Ar+ ions with energy 18 keV and the influence of these distributions of an adsorbat presence on surfaces of materials were studied. Energy distributions of atomic secondary ions were broad, occupy an energy range from 0 up to 2000 eV; the most probable energy of these ions were in the range 10-200 eV; the influence of oxygen resulted in changes of the energy distributions well correlated with the data of semiconductors adsorption power. The obtained results showed the significant influence of physical and chemical properties of materials (zoned structure, parameters of chemical bonds) on the probability of flying away of the sputtered particles in the certain state of excitation. In particular, the processes of non-radiating losses of excitations, the main from which is the process of resonant ionization, appreciably depend on a relative location of a flying away excited atom energy level and energy levels of a solid. For metals compounds the additional channel of an excited particles formation in comparison with metals was observed, that associated with the breack of chemical bonds. The methods of attack were developed and methodical researches for studying of organic objects using ions methods of diagnostics were done. The results of research may be used at formation of new materials with the given properties; for clearing out of the general mechanisms of interaction of medium energy ions with materials and creation of the unified theory of these processes; and also in diagnostics of materials, including organic and biological, at an atomic level. Product Description popup.authors popup.nrat_date 2020-04-02 Close