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Information × Registration Number 0304U004217, 0103U004241 , R & D reports Title RESONANT-TUNNEL PHENOMENA IN TED MM - RANGE popup.stage_title Вплив тунелювання та резонансного тунелювання електронів на роботу діодів з МПЕ Head Prohorov E., Registration Date 26-03-2004 Organization Kharkov National University named after V.N.Karazin popup.description2 The nanoscale intervaley transfer electron MDSs and wide frequency band GaAs oscillators operating in mm - wave range have been considered. The purpose of work is investigation of new semiconductor A3B5 devises for using in millimetre wave range. In considered devises resonance tunnelling effect and transfer electron effect have been combined that lead to higher oscillation frequency in comparison with known active elements (Gunn diode and IMPATT diode). The problem has been studied by computer - aided modelling physical process in semiconductor transfer electron devise and A3B5 compounds nanoscale structures and experimental investigating of factors that influence on frequency band of GaAs mm - wawe oscillators. Mathematical model for analyzing physical processes in Al0,2Ga0,8As/GaAs, In0,53Ga0,47As/AlAs, InSb/AlAs/GaSb, AlAs/GaAs structures with transfer electron effects and quantum mechanical effect (tunnelling and resonance tunneling )is considered. The peculiarly ofoperation, energy and impedance characteristics of combined transfer electron diodes and resonance - tunnelling structures has been studied. The frequency bands and oscillations efficiency has been determined. THe possibilities by using the combined of resonance tunnelling effect and transfer electron effect for expend of frequency band has been shown. The factors influencing on broadcast of mm - wave GaAs oscillators has been investigation experimentally. Product Description popup.authors popup.nrat_date 2020-04-02 Close