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Information × Registration Number 0304U004264, 0101U001839 , R & D reports Title Current transport processes in elements of control and communication systems based on А3В5 thin-film structures popup.stage_title Виявлення зв'язку між статичними параметрами польових транзисторів з бар'єром Шоткі зі змиканням областей об'ємного заряду бар'єра і переходів на міжшарових межах Head Pryvalov E.M., Registration Date 27-04-2004 Organization Institute of Technical Mechanics of the National Academy of Sciences and National Space Agency of Ukraine popup.description2 The study is concerned with thin-film GaAs structures. The investigation method is analytical, numerical and experimental. Quasi-two-dimensional models of a GaAs MESFET both on a two-layer structure consisting of a low-resistivity film and a semiinsulating substrate are developed. The models allow for merging of the space charge regions of the Schottky barrier and of the interlayer junctions. It is shown that when this merging becomes considerable, the gate high-field domain formation threshold voltage increases with the magnitude of the negative gate voltage. The field of application is the production of GaAs MESFETs. Product Description popup.authors popup.nrat_date 2020-04-02 Close