Search academic texts

Information × Registration Number 0305U003236, 0103U004241 , R & D reports Title RESONANT-TUNNEL PHENOMENA IN TED MM - RANGE popup.stage_title Вплив тунельних та лавинних ефектів на роботу діодів з МПЕ мм-діапазону Head Prohorov E., Registration Date 02-03-2005 Organization Kharkov national university named after V.N. Karazin popup.description2 The nanoscale intervaley transfer electron MDSs and wide frequency band GaAs oscillators operating at mm-wave range been considered. The propose of work is investigation of new semiconductor A3B5 devices for using in millimetre wave range. In considered devices resonance tunnelling effect and transfer electron effect have been combined that lead to higher oscillation frequency in comparison with known active elements (Gunn diode and IMPATT diode). The problem has been studied by computer - aided modelling physical process in semiconductor transfer electron device and A3B5 compounds nanoscale structures and experimental investigating of factors that influence on frequency band of GaAs mm-wave oscillators. Mathematical model for analysing physical processes in Al0,2Ga0,8As/GaAs, AlAs/GaAs structures with transfer electron effects and quantum mechanical effect (tunneling and resonance tunnelling) is considered. The peculiary of operation, energy and impedance characteristics of combined transfer electron diodes and resonance - tunnelling structures has been studied. The frequency bands and oscillations effeciency has been determined. The possibilities by using the combined of resonance tunnelling effect and transfer electron effect for expend of frequency band has been shown. The factors influencing on broadcast of mm-wave wideband GaAs - oscillators has been investigation experimentally Product Description popup.authors popup.nrat_date 2020-04-02 Close