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Information × Registration Number 0305U003298, 0103U004240 , R & D reports Title Transfer electron effect in mm-range variband devices on the basis of semiconductors compounds A3B5 popup.stage_title Енергетичні та частотні характеристики діодів Ганна з n+ - n- катодом на основі варизонних напівпровідників сполук А3В5 Head Arkusha U., Registration Date 09-03-2005 Organization Kharkov national university named after V.N. Karazin popup.description2 The work of Gunn diodes with ohmic n+-n-cathode contact on base of triple InP1-x(z)Asx(z), Alx(z)Ga1-x(z)As and Inx(z)G1-x(z)As variband semiconductors has been investigated with help of two-level, displaced-maxwellian approach model of transfer electron effect. The triple A3B5 semiconductors available for mm-wave Gunn diodes. The maximum of efficiency and output power of InP1-x(z)Asx(z), Alx(z)Ga1-x(z)As, Inx(z)G1-x(z)As variband Gunn diodes exceed maximum of output characteristics curve of GaAs and InP Gunn diodes in two time. The oscillation frequency rejection limit of InPxAs1-x, AlxGa1-xAs, InxGa1-xAs diodes equals correspondingly ~160, ~155, ~180 GHz. It is necessary to expect the appearance of the dipole domains and high values of the output power in diodes with ohmic n+-n-cathode contact on the basis of Ga0.65P0.35As-GaAs, GaAs0.45Sb0.55-GaAs, Al0.20Ga0.80As-GaAs, GaAs-In0.4Ga0.6As In0.48Ga0.52P-InP, In0.07Ga0.93Sb-In0.70Ga0.30Sb, InP0,75Sb0,25-InP, InP-InP0,75Sb0,25 variband semiconductors. Product Description popup.authors popup.nrat_date 2020-04-02 Close