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Information × Registration Number 0305U003328, 0101U001839 , R & D reports Title Current transport processes in elements of control and communication systems based on А3В5 thin-film structures popup.stage_title Дослідження впливу характеру розподілу глибоких центрів по пластині на процеси струмопереносу в структурах сполук А3В5 Head Pryvalov E.M., Registration Date 17-03-2005 Organization Institute of Technical Mechanics of the National Academy of Sciences and National Space Agency of Ukraine popup.description2 The study is concerned with thin-film GaAs structures. The investigation method is analytical, numerical and experimental. It is shown that in GaAs three-layer structures MESFET parameter spread that is due to nonuniformity in the distribution of vacant deep traps over the wafer can by judged from the effective concentration of vacant deep traps at the film-buffer layer interface. A method for predicting the MESFET threshold voltage from the measured photocapacitance which is based on the peculiarities of the photocapacitance of GaAs thin-film structures is developed. The field of application is the production of GaAs MESFETs. Product Description popup.authors popup.nrat_date 2020-04-02 Close