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Information × Registration Number 0305U003529, 0104U010879 , R & D reports Title Theoreticfl and experimental researches by the method of scanning probe microscopy of the atomic structure of thin oxides layers which are the elements of the applied structures. Development and optimization of methods of implantation of the Si+ low-energetic ions in the structure of the SiO2 nanothin thermal oxides on monocrystal silicon substrate. popup.stage_title Теоретичні та експериментальні дослідження методом скануючої зондової мікроскопії атомарної структури тонких шарів оксидів, які є елементами прикладних структур. Розробка та оптимізація методів імплантації. Head Berdar N., Registration Date 25-04-2005 Organization "Elisat" scientific productive dauter company popup.description2 Work was directed for development of zondovih (ASM - atomic power microscopy, STM - scanning tunnel microscopy) methods of the directed forming of electric qualities of semiconductor nanostruktur for forming under the probe of these devices of semiconductor nanostruktur of the applied value with the beforehand set electric properties. An experimental technological line upon the receipt of a new element base with the management by the external charge of simultaneous transfer of energy was created.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close