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Information × Registration Number 0307U001167, 0106U000361 , R & D reports Title Chargedand Size Effects in Nanostructures and Clusters popup.stage_title Моделювання одноелектронного транзистора на металевій кластерній структурі Head Pogosov Valentin Valterovich, Registration Date 29-01-2007 Organization Zaporizhzhia National Technical University popup.description2 Metal clusters and nanostructures are subjects of research. The aim of work is to develop theory of the single-electron tunneling in the structure based on the metal clusters with taking into account energy level quantization of the clusters and restriction associated with the Coulomb instability. It is demonstrated that the chemical potential of the low-dimensional systems is completely determined by the level hierarchy in dots, and also by the number of electrons. Calculations show that the temperature gradient of the chemical potential can be both positive and negative, and at some temperatures it can change sign. The effects of single-electron tunnel charging and Coulomb blockade in a cluster structure are studied with allowance for the quantization of the electronic levels in an island electrode. Under the assumption that the total energy of the system is conserved with inclusion of the contact potential difference, equations are derived for analyzing the current-voltage characteristic. Restrictions associated with the Coulomb instability of a cluster are introduced into the theory in a simple way. We demonstrate that the current gap exhibits non-monotonic size dependences which are related to the quantization of the electron spectrum and the Coulomb blockade. Product Description popup.authors popup.nrat_date 2020-04-02 Close