Search academic texts

Information × Registration Number 0307U001630, 0106U001566 , R & D reports Title Resonant - tunnel and avalance phenomena in milimeter wave transfer electrons A3B5 ( GaAs, GaN, InN, AlN) devises popup.stage_title Вплив тунельних та лавинних ефектів на роботу РТД та діодів з МПЕ мм-діапазону Head Prohorov E., Registration Date 17-04-2007 Organization Kharkov National University named after V.N.Karazin popup.description2 The nanoscale and intervaley transfer electron structures and wide frequency band mm-wave GaAs oscillators have been considered. The purpose of work is investigation of resonance tunneling in A3B5(GaAs,GaN,InN,AlN and other) resonance tunneling diodes and resonance tunneling and avalanche effects in A3B5(GaAs,GaN,InN,AlN). It is necessary for creation new high efficiency semiconductor devises, wide frequency band RTD or TED oscillators, noise oscillators having higher noise level to compare to known mm - wave devise (Gunn diode and IMPATT diode). The problem has been studied by computer - aided modelling physical process in semiconductor transfer electron device and А3В5 compounds nanoscale structures and experimental investigating of wide frequency band oscillators with electronic frequency gliding. Mathematical model taking into account space charge in contacts region for analysing physical processes in TED with tunnel contacts is offered. The influence of electrophysicparameters on frequency band and oscillation efficiency have been investigated. The influence of avalanche and contacts form on nitride Gunn diode's current - voltage characteristics breadth are investigated. The wide frequency band oscillators with electronic frequency gliding of 60…70 GHz experimentally have been developed. The oscillators exhibited output on second harmonics of 10 mW. NANOSCALE STRUCTURE, RESONANCE-TUNNELING CATHODE, GUNN DIODE, OSCILLATOR, BROADCAST, AVALANCHE Product Description popup.authors popup.nrat_date 2020-04-02 Close