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Information × Registration Number 0307U003161, 0106U001392 , R & D reports Title Effect of the space charge at the interlayer interfaces on current transport in GaAs-based planar structures for communications and control elements popup.stage_title Дослiдження бар'єрної ємностi гетероструктур AlxGa1-xAs/GaAs з урахуванням вбудованого просторового заряду на гетеромежi Head Pryvalov E.M., Registration Date 30-01-2007 Organization Institute of Technical Mechanics of the National Academy of Sciences and National Space Agency of Ukraine popup.description2 The study is concerned with AlxGa1-xAs/GaAs heterostructures. The investigation method is analytical, numerical and experimental. It is shown that for AlxGa1-xAs/GaAs heterostructures with deep centers the low-frequency capacitance-voltage characteristic has a rising portion if the deep centers are located at the heterointerface, which is due to the onset of deep center emptying, and the transfer characteristic shows an undershoot after the application of a positive voltage pulse to the gate, from which the deep center activation energy can be extracted. The field of application is the production of high electron mobility transistors. Product Description popup.authors popup.nrat_date 2020-04-02 Close