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Information × Registration Number 0308U001151, 0106U001392 , R & D reports Title Effect of the space charge at the interlayer interfaces on current transport in GaAs-based planar structures for communications and control elements popup.stage_title Дослідження бар'єрної ємності іонно-імплантованих тонкоплівкових структур GaAs з урахуванням наявності області вбудованого просторового заряду у місці різкого падіння густини легуючої домішки Head Pryvalov E.M., Registration Date 24-01-2008 Organization Institute of Technical Mechanics of NASU and NSAU popup.description2 The study is concerned with GaAs ion-implanted structures. The investigation method is analytical, numerical and experimental. A model for calculating the barrier capacitance of GaAs ion-implanted structures with deep centers, which drops the traditional depletion approximation, is developed. It is shown that the low-frequency capacitance-voltage characteristic of GaAs ion-implanted structures has a rising section, which is due to the presence of deep centers and which, as distinct from epitaxial structures, disappears as the concentration of deep centers is increased. The field of application is the production of GaAs ion-implanted field- effect transistors. Product Description popup.authors popup.nrat_date 2020-04-02 Close