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Information × Registration Number 0308U001541, 0106U001566 , R & D reports Title Resonant - tunnel and avalance phenomena in milimeter wave transfer electrons A3B5 ( GaAs, GaN, InN, AlN) devises popup.stage_title Енергетичні та частотні характеристики діодів з резонансно-тунельними та лавинними ефектами Head Prohorov E., Registration Date 08-02-2008 Organization Kharkov National University named after V.N.Karazin popup.description2 The object of investigation - the quantum-dimension structures based on nitrides (GaN, InN, AlN), the structures with intervalley transition of electrons (IET) and noise GaAs diodes of cm- and mm- waveranges. The aim of work - the investigation of resonant tunnelling in resonant-tunnelling diodes (RTD) based on nitrides(GaN, InN, AlN), resonant-tunnelling and avalanch effects in the semiconductors A3B5 (GaAs, GaN, InN, AlN) for designing of new semiconductor devices whith widened frequency and noise features in comparison with known Gunn diodes and IMPATT diodes of mm-range. The technique of investigation - computer simulation of physical processes in semiconductor transfer electron device and А3В5 compounds, quantum-dimension structures based on nitrides; experimental investigation of noise diodes based on GaAs whith thin semiinsulating layer in the near-cathode region. The actuality of investigation is conditioned by necessity of creation of new semiconductor devices of short-wave mm- and submm- range. The novelty of work - fundamental investigations by creation of new semiconductor devices for generation of power in mm- and submm- waveranges on basis of nitrides is carried out for the first time. The results of work and recommendations will be introduced in the production of new solid-state devices of micro-, nano and optoelectronics. The main fundamental results: 1. The RTDs based on nitrides AlN/AlxGa1-xN, GaN/InxGa1-xN have the efficiency 10…30% and operate on frequencies up to 1 THz. 2. The complex form of the voltage on the LSA-diode makes efficiency higher on 15…20% on the main harmonic, and on 5…10% in the mode of harmonics' generation. 3. Experimentally realized, developed and investigated the construction of the GaAs noise diode with thin semiinsulating layer in the near-cathode region. It has the spectral density of noise power 104…105 kT0 in mm-range. KEY WORDS: QUANTUM-DIMENSION STRUCTURE, RESONANCE-TUNNELING DIODE, GUNN DIODE, OSCILLATOR, IMPACT IONIZATION, NOISE DIODE. V.N. Karazin Kharkov National University, Svoboda sq., 4, Kharkov, 61077, Ukraine. Product Description popup.authors popup.nrat_date 2020-04-02 Close