Search academic texts

Information × Registration Number 0308U001600, 0106U010025 , R & D reports Title Research of an opportunity of creation of qualitative contact systems on silicon and development of techniques of the control of their parameters. popup.stage_title Дослідження можливостей створення якісних контактних систем на кремнії та розробка методик контролю їх параметрів Head Nikonova Z.A., Registration Date 12-02-2008 Organization Zaporozhye State Engineering Academy popup.description2 In the real work the methods of creation of the contact systems are analysed to the semiconductor devices and IMS. Semiconductor structures are probed by the method of Vol't-faradnykh of descriptions. The calculation of parameters of the superficial consisting is made of the contact systems and influence of different factors is probed on their quality. The method of control of parameters and descriptions of diffusive structures is developed on the basis of method of unstationary capacity spectroscopy of deep levels. The temperature conditions of receipt of the contact systems are probed and quality of annealing of semiconductor structures control is conducted. The of small power is developed with automated control unit annealing of semiconductor structures. Product Description popup.authors popup.nrat_date 2020-04-02 Close