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Information × Registration Number 0308U003084, 0107U000693 , R & D reports Title The investigation of physical effects in semiconductor compounds under the influence of sources of short wave ultraviolet radiation and detection popup.stage_title Дослідження механізмів дії слабкого і потужного випромінювання короткохвильового діапазону в напівпровідникових сполуках А2В6, А3В5 Head Katrich V, Beletskij N, Registration Date 29-02-2008 Organization Kharkov national university named after V.N. Karazin popup.description2 The lead{carried out;spent} examinations of properties and key parameters of semiconducting compounds which can be more perspective in comparison with silicon which widely uses for detection of optical emanation. Perspective substances for making detectors of a ultraviolet radiation (especially short-wave band) recognize semiconducting compounds such as А3В5 and А2В6 (ZnSe, ZnSSe, CdZnTe, Cd, Si, Ga, Ga), and also amorphous both organic semiconductive materials and polymer films. It is shown, that for making УФ of detectors on a band of 0.24-0.35 nanometers perspective are interconnections ZnSe, Ga, CdZnTe. These interconnections have advantages in comparison with silicon on forbidden bandwidth, major atomic number and radiation sensitivity. Importance of carrying out of processing procedures on surface treatment of semiconductive materials before drawing of metal contact electrodes (mechanical and especially chemical treatment) for reception of devices with necessary quantity of resistance and a current is shown and proved. Product Description popup.authors popup.nrat_date 2020-04-02 Close