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Information × Registration Number 0308U007687, 0108U011074 , R & D reports Title Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics popup.stage_title Дослідження та розробка технології виготовлення діодів Ганна 3 міліметрового діапазону з підвищеними енергетичними характеристиками, на основі фосфіду індія Head Kudryk Yaroslav Yaroslavovich, Registration Date 25-12-2008 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 We studied the pulsed I-U curves of InP Gunn diodes with Au-TiBx-AuGe-n-n+-InP ohmic contacts injecting hot electrons, as well as those with usual ohmic contacts based on the Au-Ge eutectic, Au:Ge=88:12; the pulse duration was 100 ns. It is shown that the threshold voltage Uthr in the Gunn diodes grows, as the Schottky barrier height increases from 0.1 up to 0.2 eV, for different diodes (with the ohmic contacts injecting hot electrons) made of the same material with a constant product nL (n is electron concentration, L is the base area thickness) but under different technological conditions; the diodes with the usual ohmic contacts have Uthr below that in the Gunn diodes with the injecting contacts. Product Description popup.authors popup.nrat_date 2020-04-02 Close