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Information × Registration Number 0308U009122, 0108U001097 , R & D reports Title The technological aspects of manufacturing of artificial substrates for epitaxy of device structures based on GaAs popup.stage_title Розробка моделей визначення умов стійкості підкладки до розчину-розплаву, теоретичні та експериментальні дослідження механізмів релаксації пружних напружень у ГС систем Si-Ge, Si-Ge-GaAs та шляхи керування ними. Вдосконалення методик низькоінерційного керування ростом при гетероепітаксії. Head Shutov Stanilav, Registration Date 10-12-2008 Organization Kherson national technical university popup.description2 The analysis of interfacial equilibrium in multicomponent system and stability conditions using thermodynamic equations of coherent phase diagram utilizing regular approximation for a solution-melt as well as perturbation theory was carried out. The modeling of mechanical strain distribution in the system was made by standard equations of elasticity theory taking into account the strain in both heteroepitaxial layer (continuous or island) and a substrate. The approximation of harmonic surface disturbance modes was applied to estimate an influence of elastic strain on the morphology of an epitaxial layer. The technique of low-inertial temperature control at crystallization front using substrate rear side cooling by a gas flow as well as the technique of growth process control using liquid phase electroepitaxy were improved. A technological accessory was developed, verification of calculation algorithms on InAs/GaSb, Si/Ge, Si/Ge/GaAs heterostructures was made. Certain results of the investigations and developments are covered by patents of Ukraine. Product Description popup.authors popup.nrat_date 2020-04-02 Close