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Information × Registration Number 0308U009202, 0107U008180 , R & D reports Title Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics popup.stage_title Дослідження та розробка технології виготовлення діодів Ганна 3 міліметрового діапазону з підвищеними енергетичними характеристиками, на основі фосфіду індія Head Konakova Raisa Vasil'evna, Registration Date 30-12-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 A comparative analysis of procedures used to measure the contact resistance Rс of ohmic contacts of semiconductor n-n+-structures and bulky samples is made; this procedure is chosen and optimized for the technical process. It is tested for the Au-TiBx-AuGe-n-InP structures, and interrelation between the parameters of surface morphology of the ТіВх diffusion barrier and Rс is studied. The minimal Rс (1.2ґ10-6 WЧcm2) for the Au-TiBx-AuGe-n-InP ohmic contact was obtained after RTA at Т = 500 °С for 40 s. Before and after RTA, the component depth profiles are studied for the ohmic contacts with optimized metallization layer thickness and Rс; the thickness and composition of the junction layer at the AuGe-n-InP interface are determined. Product Description popup.authors popup.nrat_date 2020-04-02 Close