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Information × Registration Number 0309U000199, 0106U001392 , R & D reports Title Effect of the space charge at the interlayer interfaces on current transport in GaAs-based planar structures for communications and control elements popup.stage_title Дослідження особливостей фотоємності класичних і квантових тонко- плівкових структур на основі GaAs Head Pryvalov E.M., Registration Date 13-02-2009 Organization Institute of Technical Mechanics of NASU and NSAU popup.description2 The study is concerned with classical and quantum GaAs-based thin-film structures. The investigation method is analytical, numerical and experimental. It is shown that for GaAs epitaxial and ion-implanted structures and selectively doped AlGaAs/GaAs heterostructures the high- and low-frequency photocapacitance appears as a positive peak and a positive peak followed by a nega- tive valley, respectively. It is found out that this behavior of the photocapacitance is due to the pres- ence of deep traps at the interface between the active layer and the layer adjacent thereto. The field of application is the production of GaAs-based field-effect transistors. Product Description popup.authors popup.nrat_date 2020-04-02 Close