Search academic texts

Information × Registration Number 0309U003162, 0107U000693 , R & D reports Title The investigation of physical effects in semiconductor compounds under the influence of sources of short wave ultraviolet radiation and detection popup.stage_title Визначення впливу контактних матеріалів на енергетичні і спектральні характеристики фотоперетворювачів на основі CuS/n -ZnS/n -ZnSe гетероструктур Head Katrich V, Beletskij N, Registration Date 24-02-2009 Organization Kharkov National University named after V.N.Karazin popup.description2 A research object is semiconductor connections of type of A2B6 and physical phenomena in them at an irradiation an ultraviolet and at his-detection. A purpose of work is an exposure of perspective semiconductor connections of type of ZnSe, CdZnTe and detections of radiation from IK to UF range, development and creation of photodetector on their basis, study of power and spectral descriptions. A research method is theoretical and experimental researches of photodetector on the basis of diodes of Schottky with different metallic contacts. Basic results and their novelty: System researches are first conducted on the use of semiconductor connections of ZnSe, CdZnTe as detectors UF radiations; - technology of causing of metallic contacts is exhaust from Pt, Pd, Au, Ni on the surface of semiconductors of ZnSe, CdZnTe and the experimental standards of photodetector are got; - voltage - current descriptions of experimental standards are measured without an irradiation and at by irradiation ultraviolet. Perspective of the use of technology of receipt of photodetector, and also their uses, is rotined for detection of radiation in a range from a visible area up to 0,26 mkm. Product Description popup.authors popup.nrat_date 2020-04-02 Close