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Information × Registration Number 0309U007214, 0108U000587 , R & D reports Title Forming of electron-hole transitions in the strain heterosystems with the selforganized defect-deformation clusters popup.stage_title Побудова нелінійної моделі напруженої тришарової гетеросистеми галій арсен - індій арсен - галій арсен з самоорганізованими точковими дефектами Head Peleshchak Roman Mykhailovych, Доктор фізико-математичних наук Registration Date 13-04-2009 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 In the framework of the nonlinear self-consistent deformation-diffusion model, the legitimacies of spatial redistribution of concentration of the point defects (vacancies and interstitial atoms) and parameter of crystal lattice deformation in GaAs/InxGa1-xAs/GaAs strained heterosystems is investigated at different values of medial concentration of dot defects. The dependence of concentration of dot defects in the InxGa1-xAs interior intense layer of GaAs/InxGa1-xAs/GaAs three-layers heterostructure from its thickness is explored at different values of medial concentration of dot defects. Product Description popup.authors popup.nrat_date 2020-04-02 Close