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Information × Registration Number 0310U002069, 0109U001095 , R & D reports Title Development and investigation of models and processes of p-n transitions and hidden layers forming in silicon plates under the action of US oscillations and mechanical pressures popup.stage_title Розроблення та дослідження моделей та процесів формування в кремнієвих пластинах p-n переходів та прихованих шарів при дії УЗ коливань і механічних напружень Head Bozhko Anatoly, Registration Date 29-01-2010 Organization Vinnitsa National Technical University popup.description2 Investigation object - the process of US oscillations and mechanical pressures implantation into silicon plates and their influence on interstitial defects redistribution created by ion-ray impurity implantation when p-n transitions and hidden layers are being formed. Work objective - development and investigation of mathematical models and processes of monotony US oscillations and mechanical pressures implantation into silicon plates along their width, as well as development and investigation of mathematical models of interstitial defects redistribution in silicon plates, created by ion-ray impurity implantation when p-n transitions and hidden dielectrical layers are being formed with the usage of US oscillations and mechanical pressures action both on the process of impurity implantation and before plates annealing for impurity activation. Investigation method - theoretical analysis. Results and their novelty - mathematical models of dynamical US oscillations implantation processes and control over their intensity in silicon plates, ion-implanted with impurities, through their static pressing to piezoelectric plates and further high-frequency US oscillations excitation in multi-layer structure semiconductor-piezoelectric with the help of electrical voltage that is applied to the piezoelectric plate have been developed. US AСTIVATION, ION IMPLANTATION, SEMICONDUCTOR Product Description popup.authors Барабан Сергій Володимирович Божко Анатолій Панасович popup.nrat_date 2020-04-02 Close
R & D report
Development and investigation of models and processes of p-n transitions and hidden layers forming in silicon plates under the action of US oscillations and mechanical pressures
Head: Bozhko Anatoly. Development and investigation of models and processes of p-n transitions and hidden layers forming in silicon plates under the action of US oscillations and mechanical pressures. (popup.stage: Розроблення та дослідження моделей та процесів формування в кремнієвих пластинах p-n переходів та прихованих шарів при дії УЗ коливань і механічних напружень). Vinnitsa National Technical University. № 0310U002069
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Updated: 2026-03-26


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