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Information × Registration Number 0310U002147, 0106U001392 , R & D reports Title Effect of the space charge at the interlayer interfaces on current transport in GaAs-based planar structures for communications and control elements popup.stage_title Дослідження ефекту керування по підкладці в планарних структурах GaAs з неоднорідними підкладками Head Pryvalov Ievgen Mykolaiovych, Registration Date 08-02-2010 Organization Institute of Technical Mechanics of NASU and NSAU popup.description2 The study is concerned with thin-film GaAs structures. The study is aimed at elucidating the features of backgating in planar GaAs structures with inhomogeneous substrates. The investigation method is analytical, numerical and experimental. It is found out that for thin-film GaAs structures with inhmogeneous substrates the backgating effect involves the formation of a stationary high-field domain at the boundary of the higher-resistivity region and the backgating threshold voltage is the voltage at which the depletion region of the domain reaches the film-substrate interface. It is shown that the backgating threshold voltage can be increased by forming in the substrate a higher-resistivity region at a sufficient distance from the film. The above results are new. The field of application is the production of GaAs-based field-effect transistors. Product Description popup.authors Іванов Володимир Володимирович Вінтман Захар Лейбович Горєв Микола Борисович Джевінський Віталій Павлович Доронін Олексій Володимирович Дробахін Олег Олегович Заболотний Петро Іванович Камков Володимир Петрович Коджеспірова Інна Федорівна Козленко Ельвіра Йосипівна Привалов Євген Миколайович Яцуненко Анатолій Григорович popup.nrat_date 2020-04-02 Close