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Information × Registration Number 0311U003160, 0110U007029 , R & D reports Title Development of nanotechnology with the aim to form multilayer contact systems for Gunn diodes on InP operating in terahertz range. popup.stage_title Розроблення нанотехнологій формування багатошарових контактних систем для діодів Ганна на основі InP терагерцового діапазону Head Ivanof B., Registration Date 14-02-2011 Organization State Scientific-Reseach Institute "Orion" popup.description2 Physical - technological bases of nano technology of forming multi-layered contact systems with anti diffusive barriers are developed and complex investigations of the multi-layered contact systems on epitaxial structures of n- nб-n type on the basis of InP for Gunn diodes of the terahertz range are carried out. Product Description popup.authors popup.nrat_date 2020-04-02 Close