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Information × Registration Number 0311U003686, 0111U004968 , R & D reports Title Investigation of characteristics of cryogenic temperatures microsensors based on silicon transistor structures for study of possibility of metrological characteristics standardization. popup.stage_title Дослідження характеристик мікросенсорів кріогенних температур на основі кремнієвих транзисторних структур для з'ясування можливості стандартизації їх метрологічних характеристик. Head Nemish Ivan Yriovych, Registration Date 24-06-2011 Organization Special Techologial Department popup.description2 The research uniformity characteristics of microsensors cryogenic temperatures for silicon-based transistor structures to determine the possible standardization of metrological characteristics. Also investigated the temperature dependence of voltage drop across the pn junctions of transistors based on the way to turning in a circle (transitions emitter-base (E-B), the base-collector (B-K) and emitter-collector (E-K)) and current value. Product Description popup.authors popup.nrat_date 2020-04-02 Close