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Information × Registration Number 0311U012058, 0111U008636 , R & D reports Title Development and investigation of characteristics of Ge/GaAs hetero junction diodes with nano dimensional strongly compensated Ge layer popup.stage_title Розроблення та дослідження характеристик гетеродіодів Ge/GaAs з нанорозмірним сильно компенсованим Ge шаром. Head Lichvan K., Registration Date 21-12-2011 Organization State Scientific-Reseach Institute "Orion" popup.description2 The construction of microwave Ge-GaAs p-i-n hetero-diodes with nano-dimension strongly compensated Ge-layer in metal-dielectric package has been developed. It was given a work-out to technological processes of contacts forming, chip manufacture and chip mounting of microwave p-i-n hetero-diodes in microwave package. Investigation of volt-ampere characteristics and transition process of switching In breadboard models of packaged microwave p-i-n diodes is carried out and scientific and technical results are summarized. Product Description popup.authors В.І. Миколаєнко В.А. Кривуца В.Г. Ноєнко В.М. Іванов М.С. Болтовець Н.Я. Урицька О.С. Слєпова С.І. Ковтун Т.І. Голинна Т.В. Коростинська popup.nrat_date 2020-04-02 Close