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Information × Registration Number 0313U005017, 0112U007416 , R & D reports Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt. popup.stage_title Розроблення технологій виробництва гетероепітаксіальних квантоворозмірних світлодіодних структур на основі InGaN/GaN/Al2O3 методом газофазної епітаксії з металоорганічних сполук з енергетичною ефективністю більш як 60 Лм/Вт Head Krukovskii Semen Ivanovich, Registration Date 25-01-2013 Organization Public Joint-stock Company "Scientific and industrial concern "Nauka" popup.description2 The fundamentals of manufacturing technology for LED heterostructures containing GaN epitaxial layers and layers of solid solutions InXGa1-XN and AlXGa1-XN by gas-phase epitaxy from organometallic compounds such as optimized technological modes of the active region finishing and crystallization of solid solutions Inх1Ga1-х1N/Inх2Ga1-х2N with minimal fluctuations of indium at the heteroboundaries. Developed technological modes of LED heterostructure layers growth allowed to get the radiative properties by measuring the plate, such as an external quantum efficiency of radiation, light flux, radiation wavelength at maximum range of 470 ± 5 nm. Optimized design of the active zone of emitting structures with optimal trapezoidal indium distribution profile in the quantum wells InXGa1-ХN. The defined optimal values of the temperature and atmosphere composition during post growth heat treatment of the heterostructures. It was found that critical condition for heteroepitaxy growth resistance is availability of gas circuit vacuum tightness. Product Description popup.authors Круковський Р.С. Круковський С.І. Михащук Ю.М. Мрихін І.О. Парфенюк П.В. popup.nrat_date 2020-04-02 Close