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Information × Registration Number 0315U005017, 0114U005599 , R & D reports Title Development of technologic process of manufacturing of active elements for sources of microwave radiation on a basis of GaN epitaxial structure of n+-n-n+ type popup.stage_title Відпрацювання техпроцесів виготовлення активних елементів джерел НВЧ - випромінювання на основі GaN епітаксійних структур n+-n-n+ типу Head Boltovets N., Registration Date 02-02-2015 Organization State Scientific-Reseach Institute "Orion" popup.description2 The technological scheme of manufacturing of GaN chips of n +-n-n + type active elements on high-alloy 4HSiC substrate is developed. Technological processes of manufacturing GaN chips of active elements n +-n-n + type on high-alloy 4HSiC substrate are worked out. Complex research of Au-Ti and Au-Ti-Al-Ti ohmic contacts to n +-GaN epitaxial layers is performed. Temperature dependences of specific contact resistance of ohmic contacts in temperature range from 4.2 to 300 K are investigated. Chip samples of| active elements on a direct current and in a pulse mode are investigated. Product Description popup.authors popup.nrat_date 2020-04-02 Close