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Information × Registration Number 2107U000585, Article popup.category Стаття Title popup.author popup.publication 01-01-2007 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/30134 popup.publisher V. Lashkaryov Institute of Semiconductor Physics Description With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on physico-technological conditions of their fabrication and annealing is determined. The model in use accounts the most complete spectrum of defects in chalcogenide, including defects in the cadmium and tellurium sublattices, and the existence of an antistructural defect on the cadmium sublattice. Calculations of the concentration of neutral and charged defects are realized for two extreme cases – full equilibrium and quenching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30134 popup.nrat_date 2025-05-12 Close