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Information × Registration Number 2111U000360, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/22033 popup.publisher Видавництво СумДУ Description The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height be increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22033 popup.nrat_date 2025-03-24 Close