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Information × Registration Number 2111U000715, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/23714 popup.publisher Видавництво СумДУ Description An analytical model describing the threshold voltage and drain current in strained-Si p-MOSFETs as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The results show that the threshold voltage falls and drain current rises due to applied uniaxial strain. The results have also been compared with the experimentally reported results and show good agreement. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/23714 popup.nrat_date 2025-03-24 Close