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Information × Registration Number 2111U000719, Article popup.category Стаття Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/36013 popup.publisher Sumy State University Description It is shown that using gyrotron irradiation it is possible to control the p-n junction in an already fabricated light-emitting structure. Shift of the compensated region of emitting structure based on GaAs:Si is conditioned by the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after gyrotron irradiation. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36013 popup.nrat_date 2025-03-24 Close