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Information × Registration Number 2111U001327, Article popup.category Thesis Title popup.author popup.publication 01-01-2011 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/20638 popup.publisher Видавництво СумДУ Description Results of measurement of resistivity of mesoporous silicon formed on n-type substrates in a wide temperature range are presented. Measurements show that at low temperatures there is a growth of resistance of four orders of magnitude compared to that at room temperature which occurs in a relatively narrow temperature range. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20638 popup.nrat_date 2025-05-12 Close