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Information × Registration Number 2112U001529, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35010 popup.publisher Sumy State University Description In this paper phonon and emission properties of ZnO films grown by metalorganic chemical vapour deposition (MOCVD) at ambient pressure and by molecular beam epitaxy (MBE) are investigated using Raman and photoluminescence (PL) spectroscopy. It is shown that high-frequency shift of non-polar phonon modes corresponds to elastic compressive strain in the plane parallel to c-axis and is equal to 3.2×10−3 and 2.2×10−3 for ZnO film grown by MOCVD and MBE, respectively. The possibility of obtaining highquality ZnO films grown by MOCVD was demonstrated. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35010 popup.nrat_date 2025-05-12 Close