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Information × Registration Number 2112U001620, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/34882 popup.publisher Sumy State University Description With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34882 popup.nrat_date 2025-05-12 Close