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Information × Registration Number 2112U001644, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35048 popup.publisher Sumy State University Description The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35048 popup.nrat_date 2025-05-12 Close