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Information × Registration Number 2112U001687, Article popup.category Thesis Title popup.author popup.publication 01-01-2012 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35140 popup.publisher Sumy State University Description In this study, we have fabricated an Al/Colchicine/p-Si structure and have investigated its current– voltage (I–V) and capacitance–voltage (C–V) characteristics at room temperature. The barrier height and ideality factor values of 0.68 eV and 3.22, respectively, have been obtained from the I-V plot. The value of the barrier height was compared with the barrier height value of 0.50 eV of a conventional Al/p-Si diode. This was attributed to the Colchicine organic film modifying the effective barrier height by affecting the space charge region of the inorganic Si semiconductor substrate. By using C – 2-V characteristics the diffusion potential value has been extracted as 1.32 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35140 popup.nrat_date 2025-05-12 Close