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Information × Registration Number 2113U000432, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/31927 popup.publisher Сумський державний університет Description Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-electron circuit characteristics in our devices qualitatively, using single-electron Monte Carlo simulator SIMON. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31927 popup.nrat_date 2025-03-24 Close