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Information × Registration Number 2113U000897, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35548 popup.publisher Sumy State University Description Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35548 popup.nrat_date 2025-03-24 Close