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Information × Registration Number 2113U000953, Article popup.category Стаття Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/33656 popup.publisher Сумський державний університет Description Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656 popup.nrat_date 2025-03-24 Close