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Information × Registration Number 2113U001686, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35169 popup.publisher Sumy State University Description Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments. Low-temperature PL measurements show a PL broad band in the region at 0.75-1.1 eV for Si / SbGa samples annealed at 900 °C. No PL was observed in the Si/SbGa samples after annealing at 1100 °C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35169 popup.nrat_date 2025-05-12 Close