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Information × Registration Number 2113U001842, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35162 popup.publisher Sumy State University Description Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasmaenhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Sirich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has been shown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has been discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35162 popup.nrat_date 2025-05-12 Close