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Information × Registration Number 2113U001922, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35176 popup.publisher Sumy State University Description Type-II semiconductor heterodimers with a staggered alignment of band edges at the heterointerface can promote spatial charge separation of the electron and hole in different parts of the heterodimer for photocatalytic and photovoltaic applications. In this paper, the two kinds of CdS-based type-II semiconductor heterodimers were successfully synthesized. Type-II CdS-CdTe heterodimers without any defects exhibited clear photo-induced electron transfer, whereas CdS-Cu31S16 heterodimers showed dominant consumption of photogenerated carries via vacancy-induced decay processes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35176 popup.nrat_date 2025-05-12 Close