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Information × Registration Number 2113U002075, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35371 popup.publisher Sumy State University Description The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the en-semble Monte Carlo method. The importance of electron impact ionization process in the transistor chan-nel for drain biases higher than 1 V is shown. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35371 popup.nrat_date 2025-05-12 Close