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Information × Registration Number 2113U002120, Article popup.category Thesis Title popup.author popup.publication 01-01-2013 popup.source_user Сумський державний університет popup.source http://essuir.sumdu.edu.ua/handle/123456789/35262 popup.publisher Sumy State University Description A round-robin characterization is reported on the sputter depth profiling of [60(3.0 nm Mo/ 0.3 nm B4C/ 3.7 nm Si)] and [60  (3.5 nm Mo/ 3.5 nm Si)] stacks deposited on Si (111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers and a pulsed radio frequency glow discharge optical emission spectrometer were used. The pros and cons of each instrumental approach are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35262 popup.nrat_date 2025-05-12 Close